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CGHV50200F

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CGHV50200F

Transistor Polarity : N-Channel

Technology : GaN

Product Category : RF JFET Transistors

Mounting Style : Screw

Gain : 11.5 dB

Transistor Type : HEMT

Output Power : 180 W

Package / Case : 4402015

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 150 V

Packaging : Tray

Maximum Drain Gate Voltage : -

Id - Continuous Drain Current : 17 A

Vgs - Gate-Source Breakdown Voltage : - 10 V to + 2 V

Pd - Power Dissipation : -

Manufacturer : Wolfspeed / Cree

Description : RF JFET Transistors GaN HEMT 4.4-5.0GHz, 200 Watt

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The CGHV50200F,from Wolfspeed / Cree,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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